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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS PA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers. 8 5 PACKAGE DIMENSIONS (in millimeter) FEATURES * Super Low On-Resistance RDS(on)1 = 10.5 m RDS(on)2 = 17 m * Low Ciss MAX. (VGS = 10 V, ID = 5.0 A) MAX. (VGS = 4 V, ID = 5.0 A) 1 4 5.37 MAX. +0.10 -0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain Ciss = 2180 pF TYP. 1.44 1.8 MAX. 6.0 0.3 4.4 0.8 * Built-in G-S Protection Diode * Small and Surface Mount Package (Power SOP8) 0.15 0.05 MIN. 0.5 0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M ABSOLUTE MAXIMUM RATINGS (TA = 25 C, all terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Notes1 Notes2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 20 10 40 2.0 150 -55 to +150 V V A A W C C Gate Gate Protection Diode Body Diode Drain Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Notes 1. 2. Source PW 10 s, Duty Cycle 1 % Mounted on ceramic substrate of 1200 mm2 x 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. Document No. D11494EJ1V0DS00 (1st edition) Date Published December 1996 N Printed in Japan (c) 1996 PA1703 ELECTRICAL CHARACTERISTICS (TA = 25 C, all terminals are connected) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 5.0 A VGS = 4 V, ID = 5.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 5.0 A VGS(on) = 10 V VDD = 15 V RG = 10 ID = 10 A VDD = 24 V VGS = 10 V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0 di/dt = 100 A/s 2180 890 370 25 210 120 75 40 5.6 9.6 0.73 46 45 1.0 8.0 MIN. TYP. 8.5 12 1.6 18 10 10 MAX. 10.5 17 2.0 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time D.U.T. RL VGS PG. RG RG = 10 Wave Form Test Circuit 2 Gate Charge D.U.T. VGS 0 ID 10 % VGS(on) IG = 2 mA 90 % RL VDD VDD 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 2 PA1703 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 2.8 PT - Total Power Dissipation - W 100 80 60 40 20 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 ( DS ) on ID - Drain Current - A R t VG (a d ite V) Lim 10 = S Note: Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm ID(pulse) 1 m s 10 ID(DC) 10 10 Po we m s 0 m s 1 rD iss DC ipa tio n Lim 0.1 0.1 TA = 25 C Single Pulse 1 ite d 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 Mounted on ceramic substrate of 1 200 mm2 x 0.7 mm Single Pulse Channel to Ambient 10 100 1m 10 m 100 m 1 10 100 1 000 0.01 0.001 PW - Pulse Width - s 3 PA1703 FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 50 ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ID - Drain Current - A 10 Tch = -25 C 25 C 75 C 125 C 40 30 20 10 VGS = 10 V 4V 1 0.1 VDS = 10 V 0 2 4 6 8 0 0.2 0.4 0.6 0.8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S RDS(on) - Drain to Source On-State Resistance - m 100 Tch = -25 C 25 C 75 C 125 C VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 10 20 ID = 5.0 A 10 1 0.1 1 10 100 0 5 10 15 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA 30 Pulsed 20 VGS = 4 V 10 VGS = 10 V 1.5 1.0 0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C 1 10 ID - Drain Current - A 100 4 PA1703 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 20 VGS = 4 V 15 100 VGS = 4 V VGS = 0 10 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 10 10 V 5 ID = 5.0 A -50 0 50 100 150 1 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss 1 000 Coss Crss 100 td(on), tr, td(off), tf - Switching Time - ns 10 000 1 000 SWITCHING CHARACTERISTICS tr td(off) 100 tf td(on) 10 10 0.1 1 10 100 1 0.1 1 VDD = 15 V VGS(on) = 10 V RG = 10 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 VDS - Drain to Source Voltage - V 14 30 VDD = 24 V 15 V 6V VGS 8 6 10 VDS 0 10 20 30 40 4 2 0 12 10 20 VGS - Gate to Source Voltage - V ID = 10 A 100 10 1 0.1 1 10 100 IF - Diode Current - A QG - Gate Charge - nC 5 PA1703 REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037 6 PA1703 [MEMO] 7 PA1703 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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